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ics for communication prescaler circuit 1.1 ghz pmb 2313t v1.5 data sheet 7.96
'dwd&odvvlilfdwlrq 0d[lpxp5dwlqjv maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. &kdudfwhulvwlfv the listed characteristics are ensured over the operating range of the integrated circuit. typical characteristics specify mean values expected over the production spread. if not otherwise specified, typical characteristics apply at ta = 25 c and the given supply voltage. 2shudwlqj5dqjh in the operating range the functions given in the circuit description are fullfilled. for detailed technical information about processing guidelines and quality assurance for ics, see our product overview ics for communications (glwlrq this edition was realized using the software system framemaker?. 3xeolvkhge\6lhphqv$*%huhlfk+doeohlwhu0dunhwlqj.rppxqlndwlrq %dodqvwud?h' 0?qfkhq ? siemens ag 1998. all rights reserved. as far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. the information describes the type of component and shall not be considered as assured characteristics. terms of delivery and rights to change design reserved. for questions on technology, delivery, and prices please contact the offices of semiconductor group in germany or the siemens companies and representatives worldwide. (see address list). due to technical requirements components may contain dangerous substances. for information on the type in question please contact your nearest siemens office, semiconductor group. siemens ag is an approved cecc manufacturer. 30%7 5hylvlrq+lvwru\ previous releases: none page subjects (changes since last revision)
3uhvfdohu&lufxlw*+] 30%7 preliminary data bipolar ic 3'62 vignette semiconductor group 3 7.96 )xqfwlrqdo'hvfulswlrq$ssolfdwlrq the ic is designed for use in mobile radio communication devices up to 1100 mhz. due to its low power consumption and low phase noise generation it is suitable for the use in battery powered handheld systems, e.g. gsm, cordless telephone and wireless lans. low supply voltage down to 2.7v. it can be switched to a low-power standby mode. internal current source at the emitter follower output. no external resistor needed in typical applications. the divide ratio is 1:64/65 or 1:128/129 depending on the external circuit configuration. the ic is board level compatible to the pmb 2312 prescaler.
30%7 semiconductor group 4 7.96 &lufxlw'hvfulswlrq the differential inputs of the ic may be connected either balanced or single ended. in the latter case the unused input must be rf-grounded with a capacitor (about 1.5 nf) with a low serial inductance. depending on the logic level at sw input the basic divide ratio of the ecl-stages is fixed to 1:64/65 or 1:128/129. the mod input determines whether modulus 1:n or 1:n+1 (n=64 or 128 according to sw-level) is active. the ic can be switched to a low-power standby mode (input stb). the mod input is ttl/cmos compatible. the emitter follower output is cmos compatible according to the application circuit on page 11. the minimum logic swing is 0.8 v pp . )xqfwlrqwdeoh ,qsxwslq /rjlfohyho 3uhvfdohuixqfwlrq 6: high = u s -0.1 v to u s low = gnd to 0.8 v or open 1:64/65 1:128/129 02' high = 2.0 v to u s or open low = gnd to 0.8 v 1:64/1:128 1:65/1:129 67% high = u s -0.1 v to u s low = gnd to 0.8 v divider q=high, standby-mode
30%7 semiconductor group 5 7.96 3lq$vvljqphqw 1 2 3 4 5 6 7 8 pin 1 rf-input i1 pin 2 supply voltage u s pin 3 divide ratio 1:64/65 - 1:128/129 control input (sw) pin 4 output q pin 5 gnd pin 6 modulus 1:n/n+1 (n=64 or 128) control input (mod) pin 7 standby mode control input (stb) pin 8 rf-input i2 i1 us sw q i2 stb mod gnd
30%7 semiconductor group 6 7.96 1:64/65 1:128/129 5 6 4 q mod gnd 2 u s 7 stb 8 1 3 sw i1 i2 i u ref %orfn'ldjudp
30%7 semiconductor group 7 7.96 $evroxwh0d[lpxp5dwlqjv 7 a = -40 to 85 c 3dudphwhu 6\pero /lplw9doxhv 8qlw 5hpdunv plq pd[ supply voltage 8 s -0.3 6 v input level (pin 1; pin 8) 8 i 2v 8 s =0v voltage swing (pin 1 to 8) 8 i18 -2 2 v input level (pin 3; pin 6; pin 7) 8 sw, 8 mod, 8 stb, -0.3 8 s +0.7v or 5.5v if 8 s +0.7v > 5.5v v 8 s =2.7...5.5v output level (pin 4) 8 q 8 s v output current (pin 4) , q 5ma junction temperature 7 j 125 c storage temperature 7 s -65 125 c thermal resistance system-ambient 5 thsa 185 k/w 2shudwlqj5dqjh 3dudphwhu 6\pero /lplw9doxhv 8qlw 5hpdunv plq max. supply voltage 8 s 2.7 5.5 v input frequency ? 50 1400 mhz ambient temperature 7 a -40 85 c within the operational range the ic operates as described in the circuit description. the ac / dc characteristic limits are not guaranteed. the maximum ratings may not be exceeded under any circumstances, not even momentarily and individually, as permanent damage to the ic will result. (6'lqwhjulw\dffruglqj0,/67''0hwk9
30%7 semiconductor group 8 7.96 $&'&&kdudfwhulvwlfv 7 $ wr?& 3dudphwhu 6\pero /lplw9doxhv 8qlw 7hvw&rqglwlrq plq w\s pd[ 6xsso\yrowdjh 8 s =2.7 to 5.5v $pelhqwwhpshudwxuh 7 a = -20 to 85 c (refered to the test circuit) supply current supply current in standby-mode input level dynamicrange (see diagram 2) output logic swing sw voltage high sw voltage low sw input current high sw input current low mod voltage high mod voltage low mod input current high mod input current low , s , s , s , stb 8 in 3 in 8 in 3 in 8 q 8 q 8 swh 8 swl , swh , swl 8 modh 8 modl , modh , modl 25 -19 25 -19 1 0.8 8 s -0.1v gnd 2.3 gnd 1.9 1.95 2.00 1.1 1.1 2.4 2.45 2.5 0.1 400 5 280 2 8 s 0.8 60 30 8 s 0.8 50 120 ma ma ma ma mv rms dbm mv rms dbm v pp v pp v v m a m a v v m a m a inputs rf-grounded, 8 s = 2.7, 7 a = 25 c , stb= 8 s output open inputs rf-grounded, 8 s = 4.0, 7 a = 25 c, stb= 8 s output open inputs rf-grounded, 8 s = 5.5, 7 a = 25 c, stb= 8 s output open inputs rf-grounded, output open, stb = gnd 100-1000mhz (sine wave) 100-1000mhz (sine wave) 1000-1100mhz (sine wave) 1000-1100mhz (sine wave) & l <= 12pf, 5 l =2k w & l <= 8pf sw= 8 s sw=gnd mod= 8 s mod=gnd ac /dc characteristics involve the spread of values guaranteed within the specified suply voltage and ambient temperature range. typical characteristics are the median of the production.
30%7 semiconductor group 9 7.96 $&'&&kdudfwhulvwlfv 7 $ wr?& 3dudphwhu 6\pero /lplw9doxhv 8qlw 7hvw&rqglwlrq plq w\s pd[ stb voltage high stb voltage low stb input current high stb input current low internal current source (see block diagram) 8 stbh 8 stbl , stbh , stbl , 8 s -0.1 gnd 400 8 s 0.8 30 60 v v m a m a m a stb = 8 s stb = gnd 'hod\wlphv mod setup time (diagram 1) w set 29 ns ac /dc characteristics involve the spread of values guaranteed within the specified suply voltage and ambient temperature range. typical characteristics are the median of the production.
30%7 semiconductor group 10 7.96 u s spectrum analyser 7hvwflufxlw signal generator (50 w) 6db attenuator (50 w ) power meter calibration of the signal generator 50 w attenuator directly connected to power meter input sensitivity and output logic swing measurement signal generator (50 w) 6db attenuator (50 w ) attenuator directly connected to power meter 1 2 3 4 5 6 7 8 30% frequency counter scope c load r l u s 1n u i u sw u q u s u mod gnd u stb 1n u i2 c load <= 8pf inc. jig and instrument input capacitance r l only needed for enhanced driving capability. 1n
30%7 semiconductor group 11 7.96 1 2 3 4 5 6 7 8 30% mod &0263// tbb 206 pmb 2306 pd f lf vco u s ca. 1nf 1n i1 u s sw q i2 1nf stb mod gnd $ssolfdwlrq&lufxlw (sw connected for 1:64/65 divider ratio)
30%7 semiconductor group 12 7.96 'hilqlwlrqri0rgxoxv6hwxs7lph ? ? w set i mod q changes of the mod-level made up to this time will still affect the q-output 'ldjudp
30%7 semiconductor group 13 7.96 'ldjudp c 3 v cc stand by c l modulus control input c 1 c 2 mod gnd v cc sw stb q i2 i1 6 db attenuator 50 ohm max. +13dbm c 1 = c 2 = 1nf c 3 = 10 pf || 22nf c l < 8pf ,qsxw'\qdplf5dqjh7hvw&rqiljxudwlrq -50 -40 -30 -20 -10 0 200 400 600 800 1000 1200 1400 1600 1800 pin / [ dbm ] f / [ mhz ] operating window 10 0 max. power of signal source 30%'\qdplf5dqjh95dwlr7hvw&rqiljxudwlrq
30%7 semiconductor group 14 7.96 'ldjudp c 3 v cc stand by c l modulus control c 1 c 2 mod gnd v cc sw stb q i2 i1 50 ohm max. +13dbm c 1 = c 2 = 1nf c 3 = 10pf || 22nf c l < 8pf input 50 ohm ,qsxw'\qdplf5dqjh7hvw&rqiljxudwlrq -50 -40 -30 -20 -10 0 10 20 0 200 400 600 800 1000 1200 1400 1600 1800 pin / [ dbm ] f / [ mhz ] operating window max. output power of signal source 30%'\qdplf5dqjh95dwlr7hvw&rqiljxudwlrq
30%7 semiconductor group 15 7.96 0hdvxuhg6shfwuxp 3kdvh1rlvh0hdvxuhphqw 7hvw6hwxs pmb 2306 gsm application board with pmb 2313 spectrum analyser rhode & schwarz fsbs plotter mac board 3& pmb 2306 register programming: n = 70, a = 20 (f out = 900.0 mhz) r = 50 (f ref = 200 khz) status = 11111 1000 11111 +4.0v i pd =2ma port 1=high dual mode preamplifier select= mod a aanti-bachlash width=1.3ns standby 1/2=active pd-polarity=positive mode 1/2=internal charge pump data acquisition=synchronous serial port 3 wire bus ref rf 10mhz ref out
30%7 semiconductor group 16 7.96 30%*60$ssolfdwlrq%rdug ic 1 pmb 2306 ic2 pmb 2313 ri en da clk mod ld mfo2mfo1 pd fi qsw i1 i2 stb mod gnd l 1 c 15 r 13 t 3 t 2 t 1 r 10 r 11 r 12 r 15 r 14 r 9 r 8 r 7 r 6 r 4 r 5 r 3 r 2 r 1 150 w 150 w 6.8 k w 8.2 k w 3.3 k w 8.2 k w 330 w 220 w 100 w 2.2 k w 18 k w 8.2 k w 8.2 k w 22 k w 39 k w 4.7 k w c 16 c 14 c 13 c 10 c 11 c 12 c 20 c 8 c 9 c 7 c 5 c 3 c 1 c 2 c 4 33 pf 33 pf 22 pf 22 pf 22 pf 22 pf 22 pf 22 pf 2.2 pf 1.2 pf bfr 280 bfr 280 bft 92 rx 1.36 ghz 10 pf bby 51 d 1 100 pf 5.6 nf 560 pf 330 pf c 17 33 pf 1 nf 22 m c 19 c 4 100 nf x 2 sma rf x 1 sma ref en da clk 22 nh v s v v v v ss dd dd1 ss1 f r a * r*) only needed when using the pmb 2312 prescaler. a &lufxlw'ldjudp
30%7 semiconductor group 17 7.96 30%*60$ssolfdwlrq%rdug /lvwri&rpsrqhqwv ,whp 4xdqwlw\ 5hihuhqfh 3duw 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 1 2 1 1 1 1 1 1 4 1 1 1 1 1 1 1 6 3 1 1 1 1 1 1 1 1 2 1 2 1 r7 r13, r14 r6 r8 r15 r10 ra r12 r3, r5, r9, r11 r4 r2 r1 l1 c11 c13 c8 c10, c12, c14 c15, c16, c30 c1, c2, c17 c9 c3 c5 c4 c7 c6 c19 d1 t2, t3 t1 x1, x2 rx 100 w 150 w 220 w 330 w 2.2k w 3.3k w 4.7k w 6.8k w 8.2k w 18k w 22k w 39k w 22nh 1.2pf 2.2pf 10pf 22pf 33pf 100pf 330pf 560pf 1.0nf 5.6nf 100nf 22 m f bby51 bfr280 bft92 sma 1.3ghz smd/0805 smd/0805 smd/0805 smd/0805 smd/0805 smd/0805 smd/0805 smd/0805 smd/0805 smd/0805 smd/0805 smd/0805 simid 01 cog/0805 cog/0805 cog/0805 cog/0805 cog/0805 cog/0805 cog/0805 cog/0805 cog/1210 x7r/1210 b54102-a1101-x60 b54102-a1151-j60 b54102-a1221-j60 b54102-a1331-j60 b54102-a1222-j60 b54102-a1332-j60 b54102-a1472-j60 b54102-a1682-j60 b54102-a1822-j60 b54102-a1183-j60 b54102-a1223-j60 b54102-a1393-j60 b82412-a3220-m b37940-k5010-c262 b37940-k5020-c262 b37940-k5100-j62 b37940-k5220-j62 b37940-k5330-j62 b37940-k5101-j62 b37940-k5331-j62 b37940-k5561-j62 b37950-k5104-k62 q62702-b631 q62702-f1298 q62702-f1062 connector b69620-g1307-a410 31 32 1 1 ic1 or ic2 or pmb 2306t p-dso-14 pmb 2306t p-dso-14 pmb 2313t p-dso-8-1 pmb 2313t p-dso-8-1 q67100-h6423 (tube) q67106-h6423 (t+r) q ?? (tube) q 67006-a6116 (t+r)
30%7 semiconductor group 18 7.96 5hsodflqjwkh30%e\wkh30% 30% 30% 7hvw&rqglwlrq supply current (typ.): input frequency supply voltage output stage load: 5.7ma 200 - 1000 mhz 4.0 - 5.5v internal load resistor 1.95 ma 100 - 1100 mhz 2.7 - 5.5 v internal current source inputs rf-grounded, 8 s = 4.0 v, 7 amb = 25 c stb open, output open phase noise: same performance, see section "phase noise measurement" input impedance (typ.): input sensitivity: 40 w || 1.3 pf 66 w || 1.4 pf see following diagram 750 w || 560 ff 1150 w || 350 ff i = 900 mhz, c 1 = c 2 = 1 nf 8 s = 4.0 v, 7 amb = 25 c i = 450 mhz, c 1 = c 2 = 1 nf 8 s = 4.0 v, 7 amb = 25 c due to the internal output current source of the pmb 2313, an external load resistor may be omitted -50 -40 -30 -20 -10 0 10 0 200 400 600 800 1000 1200 1400 1600 1800 pin / [ dbm ] f / [ mhz ] pmb 2313 vers. pmb 2312 dynamic range 4v ratio 65 test circuit 1 max. output power of signal source 2313 2312 input sensitivity of pmb 2313 versus pmb 2312 measurement according to test configuration 1 pmb 2313 operating window in most cases.
30%7 semiconductor group 19 7.96 3dfndjh2xwolqhv 3odvwlf3dfndjh3'62 (dual-in-line-package, small-outline) 20 a 8 din 41870 t16 (smd) 5,2 max 4 -0,2 1,75 max 0,7 60,2 0,19 +0,06 5 1,45 -0,2 0,7 max 3,81 1,27 0,35 +0,15

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